Samsung Electronics Approves 6th Generation D1c DRAM Mass Production, Intensifying HBM4 Competition
Breakthrough in Advanced Memory Technology Samsung Electronics has successfully completed production readiness approval (PRA) for its cutting-edge 6th generation D1c DRAM chips, marking a significant milestone in the global memory semiconductor race. The approval, finalized on June 30th, represents Samsung's latest advancement in ultra-fine 10-nanometer manufacturing processes. The D1c technology represents the most advanced DRAM manufacturing process currently available, featuring circuit line widths of approximately 12-13 nanometers. This breakthrough positions Samsung to compete more aggressively in the high-bandwidth memory (HBM4) market, which is crucial for next-generation AI applications. Production readiness approval signifies that Samsung's internal quality standards have been met, clearing the way for full-scale commercial production of these advanced memory chips. Revolutionary D1c Technology Specifications ...